Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)

HL 84.11: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Cathodoluminescence and Electron Beam Induced Current Study on Grain Boundaries in Silicon — •Markus Nacke¹, Matthias Allardt¹, Paul Chekhonin², Ellen Hieckmann¹, and Jörg Weber¹ — ¹TU Dresden, IAP/ Halbleiterphysik — ²TU Dresden, ISP/ Metallphysik

Temperature dependent cathodoluminescence (CL) and room temperature electron beam induced current (EBIC) measurements have been used to investigate the optical behaviour and electrical activity of grain boundaries (GBs) in silicon. Electron backscatter diffraction (EBSD) was applied for a comprehensive characterization of the structural properties of the GBs including the misorientationaxis and -angle as well as the crystallographic orientation of the GB plane. It was found that the panchromatic CL contrast of Σ3 large-angle GBs depends strongly from the hkl-type of the GB plane. The results are in agreement with EBIC investigations on coherent and incoherent twins in Si. D1 emission (0.812 eV) was detected at a small-angle GB (SA-GB). Other D-lines were not observed. Mono- and pan-CL investigations performed in the temperature range from 4.5K to 50K revealed a complex CL contrast behaviour of the SA-GB. Cross-correlation (CC-) EBSD was applied to analyze the relationship between the strain field of the SA-GB and the spatial D1 emission distribution. CC-EBSD results indicate that the crystal lattice is locally expanded at the SA-GB.