Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)
HL 84.12: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Electrical characterization of femtosecond laser sulfur doped silicon — •Arne Ahrens1, Philipp Saring1, Anna Lena Baumann2, Stefan Kontermann2, Wolfgang Schade2, and Michael Seibt1 — 1IV.Physikalisches Institut, Georg-August Universität Göttingen, Friedrich Hund Platz 1, 37077 Göttingen, Germany — 2Frauenhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Gosslar, Germany
Femtosecond (fs) laser pulse irradiation in sulfur hexaflouride atmosphere is a versatile tool to modify optical and electrical properties of silicon. Structuring of the surface and sulfur doping beyond the solubility limit (hyperdoping) enhance optical absorption in the sub-bandgap and in the visible range which is attributed to surface structuring and the introduction of deep levels, respectively. Especially the sub-bandgap absorption makes such material a promising candidate for intermediate band solar cell applications, especially if impurity bands form due to a Mott transition [1]. In case of p-type silicon substrates, sulfur hyperdoping also leads to the formation of a buried pn-junction which has recently been studied by means of cross-section transmission electron microscopy (TEM) and electron-beam induced current (EBIC) [2] as well as capacitance-voltage (CV) and SIMS measurements [3]. In this work, we apply EBIC, temperature-dependent CV- and deep-level transient spectroscopy (DLTS) to study deep levels which are introduced by the irradiation with fs laser pulses accompanied by careful TEM analyses. [1] M. Winkler et al., Phys. Rev. Lett. 106, 178701 (2011). [2] P. Saring et al., Appl. Phys. Lett. 103, 061904 (2013) [3] K.-M. Guenther et al., Appl. Phys. Lett. 102, 202104 (2013)