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Mo, 09:30–13:00 |
H 2032 |
DS 1: Organic Electronics and Photovoltaics |
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Mo, 09:30–13:00 |
H 0111 |
DS 2: Thin Film Characterisation I: Structure Analysis and Composition |
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Mo, 15:00–19:30 |
H 2032 |
DS 3: Organic Thin Films |
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Mo, 15:00–18:30 |
H 0111 |
DS 4: Thin Film Characterisation II: Structure Analysis and Composition |
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Mo, 15:00–17:45 |
A 053 |
DS 5: Transport: Topological Insulators 1 (joint session with DS, HL, MA, O) |
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Mo, 15:00–16:45 |
EW 202 |
DS 6: Organic photovoltaics and electronics - mostly cell design (jointly with CPP,DS) |
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Mo, 17:00–19:00 |
EW 202 |
DS 7: Organic photovoltaics and electronics - mostly properties of the absorber (jointly with CPP,DS) |
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Mo, 18:45–20:00 |
H 0111 |
DS 8: Application of Thin Films |
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Di, 09:30–13:00 |
H 2032 |
DS 9: Focussed Session: Doped Si nanostructures (joint session with HL) |
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Di, 09:30–11:00 |
H 0111 |
DS 10: Thermoelectric materials |
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Di, 09:30–13:00 |
H 3005 |
DS 11: Transport: Topological Insulators 2 (joint session with DS, HL, MA, O) |
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Di, 09:30–12:15 |
A 053 |
DS 12: Transport: Graphene (joint session with DS, DY, HL, MA, O) |
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Di, 10:00–12:30 |
C 243 |
DS 13: Interfaces and Thin Films I (joint session with CPP) |
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Di, 10:30–13:15 |
MA 043 |
DS 14: Plasmonics and nanooptics: Structure, fabrication and characterization (joint session with O) |
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Di, 11:15–12:15 |
H 0111 |
DS 15: High-k and Low-k Dielectrics (joint session with DF) |
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Di, 12:15–13:00 |
H 0111 |
DS 16: Atomic Layer Deposition |
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Di, 14:00–16:00 |
H 0110 |
DS 17: Transport: Topological Insulators 3 (joint session with DS, HL, MA, O) |
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Di, 14:00–16:00 |
C 243 |
DS 18: Interfaces and Thin Films II (joint session with CPP) |
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Mi, 09:30–12:15 |
H 2032 |
DS 19: Ion and electron beam induced processes |
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Mi, 09:30–13:00 |
H 0111 |
DS 20: Focussed Session: In-situ optical spectroscopy |
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Mi, 09:30–13:00 |
EB 107 |
DS 21: Multiferroics I (joint session with DF) |
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Mi, 09:30–13:00 |
C 243 |
DS 22: Interfaces and Thin Films III (joint session with CPP) |
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Mi, 09:30–11:30 |
ER 270 |
DS 23: Topological insulators: Theory (HL with DS/MA/O/TT) |
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Mi, 10:30–12:45 |
MA 042 |
DS 24: Metal substrates: Structure, epitaxy and growth (joint session with O) |
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Mi, 13:15–13:45 |
HE 101 |
DS 25: GAEDE-PREIS 2015 |
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Mi, 15:00–19:00 |
H 2032 |
DS 26: Layer Properties: Electrical, Optical, and Mechanical Properties |
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Mi, 15:00–16:15 |
H 0111 |
DS 27: Micro- and Nanopatterning |
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Mi, 15:00–18:50 |
EB 107 |
DS 28: Multiferroics II (joint session with DF) |
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Mi, 15:00–18:15 |
MA 042 |
DS 29: Oxide and insulator surface: Structure, epitaxy and growth (joint session with O) |
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Mi, 15:00–16:30 |
ER 270 |
DS 30: Topological insulators: Structure and electronic structure (HL with DS/MA/O/TT) |
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Mi, 11:45–13:00 |
ER 270 |
DS 31: Topological insulators: Transport (HL with DS/MA/O/TT) |
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Mi, 16:30–18:45 |
H 0111 |
DS 32: Spins in organics |
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Mi, 19:00–20:00 |
H 0111 |
DS 33: Mitgliederversammlung |
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Do, 09:30–12:45 |
H 2032 |
DS 34: Focussed Session: Oxide semiconductors I (joint session with HL) |
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Do, 09:30–13:00 |
H 0111 |
DS 35: Graphen |
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Do, 09:30–12:00 |
Poster A |
DS 36: Poster Session I |
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Do, 15:00–19:00 |
H 2032 |
DS 37: Focussed Session: Oxide semiconductors II (joint session with HL) |
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Do, 15:00–18:45 |
H 0111 |
DS 38: Phase change/ resistive switching |
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Do, 16:00–18:30 |
Poster F |
DS 39: Poster Session II |
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Fr, 09:30–13:15 |
H 2032 |
DS 40: Metallic nanowires on the atomic scale (joint session with O) |
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Fr, 10:30–12:45 |
MA 042 |
DS 41: Semiconductor substrates: structure, epitaxy and growth (joint session with O) |
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