Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.1: Poster

Montag, 16. März 2015, 15:00–20:00, Poster B

Multi-beam sputtering approach for creation of material libraries — •Martin Becker, Angelika Polity, and Bruno K. Meyer — 1st Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

Ion beam sputter deposition (IBSD) has been under focus of research for a number of years due to the flexibility it provides in the deposition of novel thin film materials. One of the characteristics, making IBSD unique, is the ability to deposit multi-component or multi-layered materials using a multi-target single ion gun scheme. This is accomplished by sequentially positioning selected targets in front of the ion source. Furthermore the demand of new combinatorial capabilities for both the synthesis of new solid state opto-electronics and optimization of existing materials has driven the interest in multi-beam arrangements. Important materials for applications include semiconductors, transparent conductors, energy storage materials and more.

We report on the application of single beam and combinatorial approach to the specific material type of transparent conducting oxides (TCOs). In this case, libraries are generated by ion beam sputtering. The application of a combinatorial approach to this materials area can greatly accelerate the rate of discovery and optimization of new materials and the optimization of devices. Initial collection of characterization tools for investigation of optical and structural properties includes UV/VIS/NIR transmission/reflection, Raman scattering and X-ray diffraction.