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Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

Montag, 16. März 2015, 15:00–20:00, Poster B

15:00 HL 21.1 Multi-beam sputtering approach for creation of material libraries — •Martin Becker, Angelika Polity, and Bruno K. Meyer
15:00 HL 21.2 An X-ray photoelectron spectroscopy (XPS) study on intrinsic and nitrogen doped tin oxides — •Fabian Michel, Benedikt Kramm, Martin Becker, Jie Jang, Angelika Polity, and Bruno K. Meyer
15:00 HL 21.3 Ohmic contacts to In2O3 single crystals — •Maryam Nazarzadehmoafi, Mattia Mulazzi, Christoph Janowitz, Stephan Machulik, Zbigniew Galazka, and Recardo Manzke
15:00 HL 21.4 Investigations on simple copper vacancies and split vacancies in Cu2O based on density functional theory — •Raphael Knecht and Christian Heiliger
15:00 HL 21.5 Ab initio Raman Spectra of Zr1−xCexO2 and of Ceria with oxygen vacancies — •Michael Bachmann and Christian Heiliger
15:00 HL 21.6 Ab-initio Electronic Structure of Different Tin Oxides — •Bianca Eifert and Christian Heiliger
15:00 HL 21.7 Ab initio study on structural and optical properties of copper oxide compounds — •Markus Heinemann, Marcel Giar, Bianca Eifert, and Christian Heiliger
15:00 HL 21.8 NIR-VUV dielectric function of (Al,In,Ga)2O3 thin films — •Rüdiger Schmidt-Grund, Chris Sturm, Christian Kranert, Hannes Krauß, Holger von Wenckstern, Michael Bonholzer, Jörg Lenzner, and Marius Grundmann
15:00 HL 21.9 Bipolar Oxide heterodiodes comprising In2O3 thin films — •Steffen Lanzinger, Daniel Splith, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann
15:00 HL 21.10 Lattice dynamics of β-Ga2O3 mono-crystals — •Marcel Weinhold, Thomas Sander, and Peter Jens Klar
15:00 HL 21.11 Stark-Effect Measurements on Giant Rydberg Excitons in Cuprous Oxide — •Johannes Thewes, Julian Heckötter, Marc Assmann, Tomasz Kazimierczuk, Dietmar Fröhlich, and Manfred Bayer
15:00 HL 21.12 Electrical conductivity and photoconductivity of single-crystalline In2O3 thin films — •Julius Rombach and Oliver Bierwagen
15:00 HL 21.13 Influence of the preparation of thin indium oxide films on the electronic surface properties — •Theresa Berthold, Jochen Räthel, Stefan Krischok, Marcel Himmerlich, Chunyu Wang, Volker Cimalla, Julius Rombach, Marko Perestjuk, and Oliver Bierwagen
15:00 HL 21.14 Conducting mechanism in epitaxial p-type Transparent Conducting Oxide Cr2O3:Mg — •Leo Farrell, Karsten Fleischer, David Caffrey, Darragh Mullarkey, Emma Norton, Elisabetta Arca, and Igor Shvets
15:00 HL 21.15 LEEM and XPEEM studies of MgO films on Ag(100) — •Sabrina Pechmann, Gina Peschel, Hagen W Klemm, Thomas Schmidt, and Rainer H Fink
15:00 HL 21.16 Impact of soft x-rays on the field effect in SrTiO3/LaAlO3 heterostructures — •Martin Zwiebler, Enrico Schierle, Emiliano Di Gennaro, Fabio Miletto Granozio, and Jochen Geck
15:00 HL 21.17 The Electronic Structure of amorphuos SnOx thin films and SnO2 single crystals — •J. Haeberle, D. Gaspar, P. Barquinha, L. Pereira, R. Martins, E. Fortunato, S. Machulik, C. Janowitz, R. Manzke, and D. Schmeißer
15:00 HL 21.18 Preparation and Characterization of Nitrogen Doped ZnMgO:Al-Thin Films — •Hannes Giese, Philipp Schurig, Limei Chen, Thomas Sander, Angelika Polity, Detlev M. Hofmann, and Bruno K. Meyer
15:00 HL 21.19 The role of oxygen ambient in the Persistent Photoconductivity of ZnO nanowires — •Florian Huber, Manfred Madel, Martin Dickel, Bruno Amann, and Klaus Thonke
15:00 HL 21.20 Impact of strain on electronic defects in (Mg,Zn)O thin films — •Florian Schmidt, Laurenz Thyen, Stefan Müller, Holger von Wenckstern, Gabriele Benndorf, Rainer Pickenhain, and Marius Grundmann
15:00 HL 21.21 Non-linear deformation potential in highly strained ZnO microwires — •Sherzod Khujanov, Chris Sturm, Marcel Wille, Michael Lorenz und Marius Grundmann
15:00 HL 21.22 Effects of functionalization of ZnO nanowire Schottky diodes on their current-voltage characteristics — •Emily T. Tansey, Alejandra Castro-Carranza, Stephanie Bley, Olesea Volciuc, Tobias Voss, and Jürgen Gutowski
15:00 HL 21.23 ZnO nanowire Schottky diodes on ITO and FTO substrates: study of the junction by electrical characterizationAlejandra Castro-Carranza, •Jairo Cesar Nolasco, Emily T. Tansey, Stephanie Bley, Olesea Volciuc, Tobias Voss, and Jürgen Gutowski
15:00 HL 21.24 Simultaneous adsorption of water and molecular oxygen on non-polar ZnO(1010) surface: a microscopic understandingDelsuz Hassani, Saied Masoumi, •Ebrahim Nadimi, and Faramarz Hossein-Babaei
15:00 HL 21.25 Field-effect transistors based on printed amorphous zinc-tin-oxide — •Benedikt Sykora, Andrea Gassmann, and Heinz von Seggern
15:00 HL 21.26 Determination of the Mn-spin temperature of photo-excited n-doped Zn1−xMnxSe by magneto-luminescence and spin-flip Raman spectroscopy — •Alexander Gerhard Knapp, Michael Hetterich, and Jean Geurts
15:00 HL 21.27 Photon-assisted field emission from a Si tip with applied AC field (10 Hz-10 MHz)Anna Zaporozhchenko, Sergey Chernov, Larisa Odnodvorets, Boris Stetsenko, •Sergej Nepijko, Hans-Joachim Elmers, and Gerd Schönhense
15:00 HL 21.28 Lattice dynamics of defect systems: The test case of Si — •Marcel Giar, Andreas Rühl, and Christian Heiliger
15:00 HL 21.29 Transport properties of individual photoluminescent silicon quantum dot studied by scanning tunneling microscopy — •Tuhin Shuvra Basu, Simon Diesch, and Elke Scheer
15:00 HL 21.30 Herstellung und Untersuchung von Bor-dotierten polykristallinen CVD-Diamantschichten — •Regina Berendakova, Nicolas Wöhrl und Volker Buck
15:00 HL 21.31 Towards stabilization of the negatively charged nitrogen-vacancy center in diamond — •Samuel Müller, Jochen Scheuer, Boris Naydenov, Junichi Isoya, and Fedor Jelezko
15:00 HL 21.32 Close to surface UHV-preparation of NV centers in diamond — •Stefan Borgsdorf, Lina Elber, Andreas Kaivers, Aniela Scheffzyk, Frederico Brandao, Dieter Suter, and Ulrich Köhler
15:00 HL 21.33 Accelerated two dimensional NMR spectroscopy using matrix completion — •Jochen Scheuer, Alexander Stark, Matthias Kost, Boris Naydenov, Martin Plenio, and Fedor Jelezko
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