Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)
HL 21.32: Poster
Montag, 16. März 2015, 15:00–20:00, Poster B
Close to surface UHV-preparation of NV centers in diamond — •Stefan Borgsdorf1, Lina Elber1, Andreas Kaivers1, Aniela Scheffzyk1, Frederico Brandao2, Dieter Suter2, and Ulrich Köhler1 — 1Experimentalphysik IV, AG Oberflächen, Ruhr-Universität Bochum, Germany — 2Experimentelle Physik IIIA, Technische Universität Dortmund, Germany
Color centers in diamond, especially NV-centers, are practical single photon emitters due to RT operation and are candidates for applications in quantum computing. NV-centers close to the surface allow electrical addressing and can be used for magnetic sensors. Here we present a setup for low energy implantation of NV centers near to the surface using UHV-conditions. We survey the influence of UHV-implantation and -annealing compared to the usual HV-heating. The usual etching processes with boiling tri-acid to remove graphitic components after the annealing process is unnecessary. In general, the all-UHV-process leads to a cleaner diamond surface and decreases the background intensity in optical characterizations of the samples.