Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.21: Poster

Montag, 16. März 2015, 15:00–20:00, Poster B

Non-linear deformation potential in highly strained ZnO microwires — •Sherzod Khujanov, Chris Sturm, Marcel Wille, Michael Lorenz und Marius Grundmann — Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 5, 04103 Leipzig, Germany

Zinc oxid nano- and microwires are promising building blocks for sensor and generator applications [1]. In this work we present the investigation of the deformation potential of ZnO microwires and the ability of engineering the band gap energy via mechanical stress. The microwires (MW) were prepared by carbothermal evaporation, bent and fixed on Si substrates. Thereby we induced a uniaxial strain up to ±3.5%. The emission properties near the band edge were investigated by using cathodoluminescence. In the unstrained case the MW exhibit a sharp emission from donor bound excitons whereas in the case of an applied strain we observed a broadening and a red (blue) shift of the near band emission for tensile (compressive) strain. For strain values up to ±1.5% we observe a linear dependence between strain and observed energy shift as already reported in the literature [2]. However, for larger strain we observe that this linear relation does not hold anymore and non-linear effects have to be considered. This is supported by the fact that the magnitude of the energy shift is significantly larger for compressive strain compared to the tensile strain.
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