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Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 63: Group IV elements and compounds

Donnerstag, 19. März 2015, 09:30–11:30, EW 015

09:30 HL 63.1 Selective formation of nano-GeSn(Si) structures on nano-patterned-Si(001) — •V. Schlykow, N. Taoka, M. Zöllner, O. Skibitzki, Y. Yamamoto, G. Niu, P. Zaumseil, G. Capellini, and T. Schroeder
09:45 HL 63.2 Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides — •Martin Liebhaber, Mathias Mews, Tim Schulze, Lars Korte, and Klaus Lips
10:00 HL 63.3 Understanding 3C-SiC/SiO2 interfaces in SiC-nanofiber based solar cells from ab initio theory — •Taufik Adi Nugraha and Stefan Wippermann
10:15 HL 63.4 Band offsets at the crystalline / hydrogenated amorphous silicon interface from first-principles — •Ebrahim Hazrati, Karol Jarolimek, and Gilles A. de Wijs
10:30 HL 63.5 Iron segregation at dislocations in silicon: a combined first-principles and kinetic Monte Carlo study — •Benedikt Ziebarth, Matous Mrovec, Christian Elsässer, and Peter Gumbsch
10:45 HL 63.6 Structural and electrical properties of sulfur doped Si by ion implantation — •Fang Liu, Slawomir Prucnal, Kun Gao, Muhammad Khalid, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou
11:00 HL 63.7 Observation of Nitrogen Vacancy Center Fluorescence from Levitated Diamonds — •Alexander Kuhlicke, Andreas W. Schell, Joachim Zoll, Heather Partner, and Oliver Benson
11:15 HL 63.8 A low-loss, broadband antenna for effcient photon collection from a coherent spin in diamond — •Daniel Riedel, Dominik Rohner, Marc Ganzhorn, Timo Kaldewey, Patrick Appel, Elke Neu, Richard J. Warburton, and Patrick Maletinsky
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DPG-Physik > DPG-Verhandlungen > 2015 > Berlin