Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 63: Group IV elements and compounds
HL 63.1: Vortrag
Donnerstag, 19. März 2015, 09:30–09:45, EW 015
Selective formation of nano-GeSn(Si) structures on nano-patterned-Si(001) — •V. Schlykow1,2, N. Taoka1, M. Zöllner1, O. Skibitzki1, Y. Yamamoto1, G. Niu1, P. Zaumseil1, G. Capellini1,3, and T. Schroeder1,4 — 1IHP, 15236 Frankfurt (Oder), Germany — 2University Leipzig, Germany — 3Università degli Studi Roma Tre, Italy — 4BTU Cottbus, Germany
The GeSn(Si) alloy is one of the key materials to link electrical and optical devices. Sn introduction makes it possible to change the energy band structure, making group IV materials suitable for optical device applications. However, crystalline defects due to lattice mismatch between GeSn(Si) and Si are a crucial problem hindering the realizing of optical devices. Recently, we have established an advanced heteroepitaxy approach to achieve fully coherent, dislocation-free Ge/SiGe/Si structures formed on nano-patterned Si(NP-Si) substrates. In this study we form nano-GeSn(Si) structures at low temperature with hydrogen plasma(HP). To confirm the possibility of selective MBE growth of Ge and Sn on Si or SiO2 surface, deposition rates of Ge and Sn on Si or SiO2 surfaces were investigated. RHEED and XPS clarified that the Ge deposition rate on the Si surface in HP at 300 °C is much higher than that on the SiO2 surface. A Sn signal in XPS could not be detected after Sn deposition on the SiO2 surface in HP. These results indicate that a window for (nearly) selective MBE growth can be achieved in HP to form nano-GeSn(Si) crystals on NP-Si. Post treatments for selective deposition of the alloy are part of ongoing investigations.