Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.2: Poster
Montag, 7. März 2016, 17:00–19:00, Poster A
Long term XPS analysis of Fe/GaAs(001) — •Karim Shamout1,2, Dominique Krull1,2, Philipp Espeter1,2, Christoph Keutner1,2, Ulf Berges1,2, and Carsten Westphal1,2 — 1TU Dortmund, Dortmund, Deutschland — 2DELTA, Dortmund, Deutschland
The III-V compound semiconductor gallium arsenide is an applicable substrate for spintronic multi-layer systems due to its electronic und magnetic properties. The structure of the 3-layers the system MgO/Fe/GaAs(100) has already been discussed in detail and it has been shown that the Ga-rich surface reconstruction of GaAs(4x2) can be investigated beneath the MgO and Fe layer by x-ray photoelectron diffraction (XPD) [1]. Since these XPD measurements last several hours and iron is highly reactive even at pressures p < 2· 10−10 mbar this study focuses on the long term oxidation of an Fe-film prepared on GaAs(001). Within this work, we demonstrate that XPD measurements of samples with terminating FE layers at the surface must be carried out as quickly as possible in order to avoid oxidation levels.
[1] D. Handschak, T. Lühr, F. Schönbohm, S. Döring, C. Keutner, U. Berges and C. Westphal. Phys. Rev. B, 88:045313, 2013