Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Postersession DS

DS 12.23: Poster

Montag, 7. März 2016, 17:00–19:00, Poster A

Magnetoresistance of devices directly written using a focused ion beam — •Vico Liersch^1,2, Tobias Warnatz¹, Sebastian Wintz^1,3, Gregor Hlawacek¹, Steffen Cornelius¹, Kay Potzger¹, Artur Erbe¹, Jürgen Lindner¹, Jürgen Fassbender^1,4, Wieland Zahn², Rantej Bali¹, and Sibylle Gemming¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Deutschland — ²Westsächsische Hochschule Zwickau, Deutschland — ³Paul-Scherrer Institut, Villigen, Schweiz — ⁴Technische Universität Dresden, Deutschland

Magnetoresistance (MR) effects are widely studied in multilayered structures, where the current flows perpendicular to the substrate plane. These devices involve complex lithography steps for achieving the required layered structure and electrical contacting. Here we present a different approach, where the magnetic layers are directly embedded into a current carrying planar wire via a focused ion beam. Ferromagnetism in an ordered (initially paramagnetic) Fe₆₀Al₄₀ alloy can be induced by ion beam irradiation [1]. We deployed a ∼ 2 nm diameter beam of Ne⁺ at 20 - 30 keV to induce a pattern with alternating ferromagnetic and paramagnetic stripes in a 40 nm thick Fe₆₀Al₄₀ wire [2]. The stripe geometry consisted of two different alternating stripe widths separated by a narrow paramagnetic spacer, and showed a two stepped reversal curve due to parallel and antiparallel magnetization configurations. MR measurements of such patterned structures, with different stripe geometries will be shown. [1] J. Fassbender, et al. Physical Review B 77 (2008). [2] R. Bali, et al. Nano letters 14.2 (2014).