Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Postersession DS

DS 12.37: Poster

Montag, 7. März 2016, 17:00–19:00, Poster A

Growth of continuous hexagonal boron nitride on smooth Ni films — •Siamak Nakhaie, Joseph M. Wofford, Manfred Ramsteiner, Carsten Pfüller, Marcelo J. Lopes, and Henning Riechert — Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

Hexagonal boron nitride (h-BN) has recently been the subject of an extensive ongoing research effort. This has in large part been driven by the suitability of h-BN for integration into heterostructures with other 2-dimensional materials, such as graphene [1]. However, a scalable synthesis method which combines high-crystalline quality with absolute thickness control remains elusive. We report the synthesis of atomically thin, continuous h-BN on smooth crystalline Ni films using molecular beam epitaxy (MBE). The presence of well-ordered, crystalline h-BN films on Ni (which were grown on MgO(111) substrates) was confirmed using Raman spectroscopy, which revealed a sharp and narrow optical-phonon peak at 1361 cm−1. The width of the Raman peak of the MBE grown h-BN is comparable to that obtained from single-crystalline mechanically exfoliated h-BN. The ubiquity of wrinkle structures in numerous atomic force microscopy scans, together with the uninterrupted observation of the h-BN Raman signal, offer strong evidence that the h-BN films are continuous. Furthermore, the smoothness of the Ni surface allowed for a detailed morphological study of the grown h-BN. This includes the observation of h-BN buckling even on single atomic steps of the underlying Ni. [1] C.R. Dean et al., Nat. Nanotechnol. 5 (2010) 722

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