Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.42: Poster
Montag, 7. März 2016, 17:00–19:00, Poster A
Implementation of a setup for ion energy and ion mass selective hyperthermal ion-beam assisted deposition of ultra-thin nitride films — •Philipp Schumacher1, Jürgen W. Gerlach1, Stephan Rauschenbach2, and Bernd Rauschenbach1 — 1Leibniz-Institut für Oberflächenmodifizierung, Leipzig — 2Max-Planck-Institut für Festkörperforschung, Stuttgart
Ion-beam assisted deposition (IBAD) is a widely used deposition technique to produce high-quality thin films of different kind. For this study, an already existing system for hyperthermal nitrogen ion-beam assisted molecular-beam epitaxy (IBA-MBE) of GaN was equipped with a quadrupole mass filter setup in order to perform the deposition process with ions of a certain preselected mass (N+ or N2+) as well as with a preselected kinetic ion energy in the hyperthermal energy range up to about 100 eV. This way, the influence of the ion species on the growth process of GaN and on the properties of the produced ultra-thin films can be investigated. The respective influence of the kinetic energy of the ions is to be studied as well. Here, the quadrupole setup in combination with a hollow-anode plasma-source is described and its performance is presented. Mass separation is demonstrated and the relevant properties of the ion beam, such as ion energy distribution, ion current density distribution and ion beam profile, are presented in regard to ion-beam assisted film growth. Finally, preliminary results on GaN film deposition by applying this setup are shown.