Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.52: Poster
Montag, 7. März 2016, 17:00–19:00, Poster A
Ion transport in memristive double barrier devices — •S. Dirkmann1, J. Trieschmann1, T. Gergs1, E. Solan2, M. Hansen3, M. Ziegler3, K. Ochs2, H. Kohlstedt3, and T. Mussenbrock1 — 1Ruhr-Universität Bochum, Theoretische Elektrotechnik, 44780 Bochum — 2Ruhr-Universität Bochum, Digitale Kommunikationssysteme, 44780 Bochum — 3Christian-Albrechts-Universität Kiel, Nanoelektronik, 24143 Kiel
The memristive double barrier device is an ultra-thin four-layer system (Nb/Al/Al2O3/NbxOy/Au). Here the memristive layer (NbxOy) is sandwiched between a Schottky and a tunneling barrier. It has been recently shown that this device offers a number of potentially interesting features [1]: An intrinsic current compliance, improved retention, and – most importantly – no need for an initial electric forming procedure. The latter is particularly attractive for applications in highly dense random access memories or neuromorphic mixed signal circuits. So far a deeper physical understanding of the interplay between the current transport mechanism and inner atomistic device structure is missing. In this contribution, we report on results of kinetic Monte-Carlo simulations of the transport phenomena in these devices. We identify the ion drift of charged point defects within the NbxOy layer as a key factor for the resistive switching behavior. We discuss the related current-voltage characteristics which are in excellent agreement with experimentally obtained data. (The work is supported by the German
Research Foundation in the frame of FOR 2093.)
M. Hansen et al., Scientific Reports 5, 13753 (2015)