Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: Poster Ib

HL 36.19: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Atomic Layer Deposition of high-k dielectrics on III-V substrates — •Soraya Karimzadah1,2,3, Torsten Rieger1,2, Ullrich Pietsch3, Detlev Grützmacher1,2, and Mihail Ion Lepsa1,21Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425 Jülich — 2JARA-FIT — 3Festkörperphysik, Universität Siegen, 57072 Siegen

Deposition of high-k dielectrics on III-V substrates by atomic layer deposition (ALD) is considered as a novel generation of gate oxide for nanodevices and surface passivation of nanowires (NWs). The thin film layers deposited by ALD are extremely uniform and conformal which is highly important for high aspect ratio structures such as NWs. We have investigated the in-situ ALD deposition of Al2O3 on MBE grown GaAs layers using TMA and H2O as ALD precursors. Experiments were carried out in a state of the art multi-material nanocluster tool composed of UHV growth and deposition systems. The window for the thermal ALD deposition of Al2O3 on Si substrate is determined. Later on, the in situ process of deposition of Al2O3 on GaAs substrate has been performed. The GaAs layers were grown by MBE and transferred to the ALD chamber without exposing the sample to air. In this way, the formation of the native oxide and any other contamination on the GaAs surface is avoided improving the quality of the oxide-semiconductor interface. The samples were characterized by ellipsometry, XRR, AFM, TEM, XPS and CV measurements. High-k dielectrics on III-V substrates with high quality as well as in-situ formed interfaces open the way to nanoscale devices with improved characteristics.

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