Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Poster Ib
HL 36.2: Poster
Dienstag, 8. März 2016, 15:00–19:00, Poster A
Growth of tilted ZnO nanowires by PLD on pre-structured sapphire substrates — •Alexander Shkurmanov1, Chris Sturm1, Guy Feuillet2, Florian Tendille3, Philippe De Mierry3, Holger Hochmuth1, and Marius Grundmann1 — 1Universität Leipzig, Inst. for Exp. Phys. II, Linnéstr. 5, 04103 Leipzig, Germany — 2CEA/LETI 17, rue des Martyrs, 38054 Grenoble Cedex 9, France — 3CNRS-CRHEA, rue Bernard Grégory, 06560 Valbonne, France
Nanowires (NWs) are highly interesting since they are building blocks, e.g. in light emitters, sensors and resonators. An advantage of ZnO NWs is that they can be grown self-organized within the bottom up approach. This growth leads typically to randomly organized growth of NWs or to NWs which are well oriented perpendicular to the surface. Here we report the well oriented growth of NW tilted against the surface normal. In doing so, we used a r-plane sapphire substrate where we apply a wet chemical etching process in order to prepare c-plane oriented facets [1]. These c-plane facets are tilted with respect to the r-plane oriented surface by an angle of about 57°. By using a high-pressure pulsed laser deposition process, an oriented growth of ZnO NWs on these c-plane facets along its normal was achieved.
[1] P. de Mierry et al, Appl. Phys. Lett. 96, 231918 (2010)