Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: Poster Ib

HL 36.25: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Overview of band-edge and defect related luminescence in aluminium nitrideTristan Koppe, Hans Hofsäss, and •Ulrich Vetter — II. Physikalisches Institut der Georg-August-Universität Göttingen, Deutschland

We present a compact overview of results published in the last decades describing near band-edge as well as defect related luminescence in aluminium nitride. Especially in the case of defect related luminescences associated with oxygen or oxygen vacancy complexes, the different points of view in literature are outlined and compared to each other.

In many cases luminescence signals in the band-gap region are assigned to specific band to impurity or donor acceptor pair transitions without regarding other possible origins. One problem are the various theories describing the same transitions based on experimental observed emission or absorption signals in combination with simulations which show sometimes contradicting results too. Due to the large number of different possible sources for defect related luminescences a detailed investigation of the stoichiometric composition of samples is necessary.

Therefore, in order to provide a point of reference, more than 200 publications investigating aluminium nitride in experiments as well as in simulations were analysed and are presented in a neatly arranged manner to provide an overview of the existing assignments.

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