Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: Poster Ib

HL 36.27: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Optical properties of InGaN/GaN core-shell nanowires — •Florian Krause1, Johannes Dühn1, Jürgen Gutowski1, Christian Tessarek2,3, Martin Heilmann2, Silke Christiansen2,3, and Kathrin Sebald11University Bremen, Institute of solid state physics, Bremen, Germany — 2Max-Planck-Institute for the Science of Light, Erlangen, Germany — 3Helmholtz-Zentrum Berlin for Materials and Energy, Berlin, Germany

Nanowires (NWs) based on GaN and InGaN can be utilized to increase the efficiency of optoelectronic applications like white light sources due to the improvement of their structural quality in comparison to planar structures. Therefore we are interested in InGaN/GaN core-shell NWs which were grown on sapphire substrates by using metalorganic vapour phase epitaxy. The NWs consist of a N-polar Si-doped GaN core with mixed polarity surrounded by an InGaN/GaN multiple quantum well shell covered by non-doped GaN. The NW size varies in diameter and height within a range of a few micrometers and their aspect ratio is between 1:2 and 1:10. The GaN core has a Ga-polar column embedded in a N-polar tube. The column favours the formation of a small pyramidal tip on the top facet of the NW and it is also covered by InGaN. To investigate the optical properties of single and ensemble NWs, their micro-photoluminescence spectra are analyzed in dependence on temperature and excitation density. In particular, the optical properties of the top facets of single NWs are most interesting with respect to carrier confinement in the InGaN accumulation zones in these facets which could be employed as single photon sources.

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