Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Poster Ib
HL 36.31: Poster
Dienstag, 8. März 2016, 15:00–19:00, Poster A
Photoconductivity of a new material: K2Hg2Se3 — •Sina Lippert1, Günther Thiele2, Felix Fahrnbauer3, Philipp Bron2, Oliver Oeckler3, Arash Rahimi-Iman1, Bernhard Roling2, Stefanie Dehnen2, and Martin Koch1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, D-35037 Marburg — 2Department of Chemistry and Materials Sciences Center, Philipps-Universität Marburg, D-35043 Marburg — 3Faculity of Chemistry and Mineralogy, Institut of Mineralogy, Crystallography and Materials Science, D-04275 Leipzig
K2Hg2Se3 is a new photoconducting material with a direct band gap of around 1.4 eV, identified by both absorption and photocurrent experiments, and verified by comparison with impedance spectroscopy measurements and band structure calculation [1]. The compound shows a semiconductor-type behavior with current-voltage characteristics comparable to GaAs.
The presented material is a chalcogenido-mercurate, which was obtained by means of solvothermal treatment of the corresponding solid precursors on large scales and compromises unprecedented, covalently linked selenidomercurate columns.
In our recent study, we found that presence of heavy element atoms in K2Hg2Se3 leads to unique material properties regarding opto-electronic, photophysical and thermoelectric properties. Their functionality can be further adjusted by a variation of the elements within a family of structurally related compounds.
[1] G. Thiele et al., Chem. Mater. 27, 2015, 4114-4118.