Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Poster Ib
HL 36.38: Poster
Dienstag, 8. März 2016, 15:00–19:00, Poster A
Influence of the growth temperature on LT- GaAs photoconductive antennas for THz generation — •Oday Mazin Abdulmunem1, Norman Born1, Martin Mikulics2, Jan C. Balzer1, and Martin Koch1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, D-35037, Marburg — 2Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH, D-52425, Jülich
THz technology is becoming a fully developed technology which is used for fundamental research as well as for industrial applications. There are several approaches to optically generate THz radiation. Most of them are based on femtosecond lasers whose spectrum is transformed into the low THz frequency range (0.1 THz to 10 THz). This can for example be achieved by optical rectification in a nonlinear crystal or by using a photoconductive antenna (Auston switch).
In this work we concentrate on the characterization of photoconductive antennas. They are based on a semiconductor material with a low carrier lifetime (< 1 ps). A well suited candidate for an excitation wavelength of 800 nm is low temperature grown GaAs (LT-GaAs). We characterize samples which were grown with various temperatures (between 200°C and 300°C). They are analyzed in a specially designed setup which allows for easy switching of the antennas. We found a clear correlation between the growth temperature of the antennas and their performance in a THz time domain spectrometer.