Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Functionalization of Semiconductors I

HL 72.3: Vortrag

Donnerstag, 10. März 2016, 10:15–10:30, H16

X-ray Fluorescence of individual GaAs/InGaAs/GaAs core-shell nanowires grown by molecular beam epitaxy on silicon (111) — •Ali Al Hassan¹, Hanno Küpers², Ryan B. Lewis², Danial Bahrami¹, Abbes Tahraoui², Lutz Geelhaar², and Ullrich Pietsch¹ — ¹Naturwissenschaftlich-Technische Fakultät der Universität Siegen, 57068 Siegen, Germany — ²Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

The growth of GaAs/In(x)Ga(1-x)As/GaAs core-shell nanowires (NWs) on silicon is a challenging route to combine optoelectronics with the silicon technology. Due to the different lattice parameters, growth of the InGaAs shell onto the NW core side plane is affected by epitaxial strain. X-ray diffraction (XRD) measurements taken on NW ensembles with momentum transfer perpendicular to the NW axis show separated Bragg peaks for core and shell materials. We probed the spatial homogeneity of the Indium distribution in the shell layers of individual core-shell NWs by means of X-ray fluorescence (XRF) analysis using a 50nm x 50nm sized white x-ray beam. For low indium contents within the InGaAs layer (nominal values of 15% and 25%), the Indium distribution within the six side facets is almost homogeneous. On the other hand, NWs with 60% of indium show randomly distributed indium-rich aggregates at the core circumference. The result are compared with XRD and SEM measurements.