HL 72: Focus Session: Functionalization of Semiconductors I
Donnerstag, 10. März 2016, 09:30–12:45, H16
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09:30 |
HL 72.1 |
Hauptvortrag:
Group IV alloys: New tricks with Silicon — •Detlev Grützmacher
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10:00 |
HL 72.2 |
MOVPE growth studies of Ga(PBi) on GaP and on GaP/Si — •Lukas Nattermann, Nikolai Knaub, Andreas Beyer, Wolfgang Stolz, and Kerstin Volz
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10:15 |
HL 72.3 |
X-ray Fluorescence of individual GaAs/InGaAs/GaAs core-shell nanowires grown by molecular beam epitaxy on silicon (111) — •Ali Al Hassan, Hanno Küpers, Ryan B. Lewis, Danial Bahrami, Abbes Tahraoui, Lutz Geelhaar, and Ullrich Pietsch
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10:30 |
HL 72.4 |
Hauptvortrag:
SiGe heterostructures for photonics interconnects — •Giovanni Isella, Jacopo Frigerio, Andrea Ballabio, Daniel Chrastina, Vladyslav Vakarin, Papichaya Chaisakul, Laurent Vivien, and Delphine Marris-Morini
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11:00 |
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30 min. Coffee Break
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11:30 |
HL 72.5 |
III/V on Si by selective area growth for optoelectronics — •Bernardette Kunert, Weiming Guo, Yves Mols, Robert Langer, and Kathy Barla
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12:00 |
HL 72.6 |
Quantitative investigation of high resolution HAADF STEM images of Ga(NAsP) laser structures — •Lennart Duschek, Tatjana Wegele, Andreas Beyer, Wolfgang Stolz, and Kerstin Volz
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12:15 |
HL 72.7 |
Identification of anti-phase boundaries on a GaP/Si(001) cross-sectional surface — Christopher Prohl, Henning Döscher, Peter Kleinschmidt, Thomas Hannappel, and •Andrea Lenz
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12:30 |
HL 72.8 |
Gain Spectroscopy on Ga(N,As,P)/(B,Ga)(As,P) Heterostructures — •Florian Dobener, Peter Ludewig, Kerstin Volz, Wolfgang Stolz, and Sangam Chatterjee
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