Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Functionalization of Semiconductors I

HL 72.5: Vortrag

Donnerstag, 10. März 2016, 11:30–12:00, H16

III/V on Si by selective area growth for optoelectronics — •Bernardette Kunert, Weiming Guo, Yves Mols, Robert Langer, and Kathy Barla — Imec, Kapeldreef 75, B-3001 Leuven, Belgium

III/V compound materials and hetero-structures are well established in conventional optoelectronic applications due to their direct band gap structure. However, in the field of Silicon Photonics the successful integration of a laser diode with sufficient life time is still unsolved. The monolithic growth of high quality III/V materials on Si substrate would open up a huge field of applications, combining the mature functionalities of Si microelectronics with the excellent optoelectronic properties of III/V hetero-structures. But the lattice mismatch between most interesting III/V candidates and Si initiates the formation of misfit and threading dislocation defects. The selective area growth of III/V materials on patterned Si wafer is a novel integration approach to achieve a low defect density in the active III/V layers. A high aspect ratio in patterned trenches leads to an efficient trapping of defects in the bottom of the trench whereas the top region has a high crystal quality (aspect ratio trapping (ART)). This presentation is an introduction to selective growth of III/V materials on patterned 300mm Si wafers by metal organic vapour phase epitaxy (MOVPE). A new approach to realize a III/V laser diode on patterned Si substrates will be discussed based on first achieved results.