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Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 83: Focus Session: Functionalization of Semiconductors II

Donnerstag, 10. März 2016, 14:45–17:15, H16

14:45 HL 83.1 Hauptvortrag: Electronic properties and applications of functionalized wide gap semiconductors — •Martin Stutzmann
15:15 HL 83.2 Frequency Conversion Properties of SnS-Clusters — •Nils W. Rosemann, Jens Eußner, Ulrich Huttner, Andreas Beyer, Kerstin Volz, Stephan W. Koch, Mackillo Kira, Stefanie Dehnen, and Sangam Chatterjee
  15:30 30 min. Coffee Break
16:00 HL 83.3 Functionalization of III/V semiconductor surfaces with small organic molecules — •Patrick Vogt
16:30 HL 83.4 Diethyl Ether on Si(001) - An Experimental Study on Adsorption Configurations and Energy Barriers — •Marcel Reutzel, Gerson Mette, Marcus Lipponer, Michael Dürr, and Ulrich Höfer
16:45 HL 83.5 Ab initio study on precursor reactivity in CVD growth: GaP on Si — •Andreas Stegmüller and Ralf Tonner
17:00 HL 83.6 In situ controlled MOVPE-preparation of As-modified Si(100) surfaces and single-domain GaP heteroepitaxy — •Oliver Supplie, Matthias M. May, Agnieszka Paszuk, Andreas Nägelein, Peter Kleinschmidt, Sebastian Brückner, and Thomas Hannappel
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