Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 83: Focus Session: Functionalization of Semiconductors II

HL 83.1: Hauptvortrag

Donnerstag, 10. März 2016, 14:45–15:15, H16

Electronic properties and applications of functionalized wide gap semiconductors — •Martin Stutzmann — Walter Schottky Institut and Physics Department, Technical University of Munich, 85748 Garching, Germany

Wide band gap semiconductors such as SiC, GaN and diamond are well suited for applications in bioelectronics and photochemistry due to their stability, their particular surface chemistry, and the possibility to change their work function by surface termination, alloying, or substitutional doping. In addition, inorganic, organic or biological surface functionalization can be used to enhance the specific properties for the targeted application. In this presentation we will review some recent examples of such applications: specific enzyme-based biosensors, the detection of cellular action potentials with electrolyte-gated field effect transistors, bio-photovoltaics with supported bacterial reaction centers, and the electronic control of photocatalytic reactions.