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HL: Fachverband Halbleiterphysik
HL 99: Gallium Nitride: Devices
HL 99.1: Invited Talk
Friday, March 11, 2016, 09:30–10:00, H17
Multifunctional 3D GaN: strategies for solid state lighting, electronics and sensing — •Andreas Waag1,4,5, J. Hartmann1,4, Hao Zhou1, S. Fündling1,4, F. Steib1,4, M. Mohajerani1, Feng Yu1, H.-H. Wehmann1,4, A.E. Gad1, D. Prades6, D. Bichler2, B. Huckenbeck2, T. Schimpke3, M. Mandl3, I. Stoll3, A. Avramescu3, M. Strassburg3, and H.-J. Lugauer3 — 1Institut für Halbleitertechnik, TU Braunschweig — 2OSRAM GmbH, Schwabmünchen — 3OSRAM Opto Semiconductors GmbH, Regensburg — 4Epitaxy Competence Center ec2, Braunschweig — 5Laboratory for Emerging Nanometrology LENA, Braunschweig — 6Department of Electronics, University of Barcelona
GaN nanorods and related high aspect ratio 3D GaN nanostructures recently attracted a lot of attention since they are expected to be an exciting new route towards extending the freedom for device design in GaN technology. Such structures offer large surfaces, defect free high quality material, as well as non-polar surface orientations, including the possibility to use very large area foreign substrates without implementing large area strain. All of these aspects are difficult or impossible to achieve when planar thin film approaches are used. This talk will give an overview on the state of the art of our 3D GaN research, pointing out the necessity for further epitaxy related research, but also describing the increasingly interesting demonstration of 3D devices like 3D LEDs, 3D nanoFETs and 3D nanosensing devices, and their substantial potential for solid state lighting, power electronics and nanometrology.