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Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 39: 1D Metal Wires on Semiconductors II

Dienstag, 8. März 2016, 14:00–16:00, S052

14:00 O 39.1 Infrared Plasmonic Investigation of Band Filling-Induced Metal-to-Insulator Transition in Au Chains on Si(111)-5x2-Au — •Fabian Hötzel, Kaori Seino, Friedhelm Bechstedt, and Annemarie Pucci
14:15 O 39.2 Optical monitoring of Ag nanostructures on Si(557) — •Sandhya Chandola, Eugen Speiser, Jochen Räthel, Ulrich Krieg, Christoph Tegenkamp, Herbert Pfnür, and Norbert Esser
14:30 O 39.3 Fabrication of one-dimensional arrays of magic clusters using a vicinal Si surface as a template — •Martin Franz, Julia Schmermbeck, and Mario Dähne
14:45 O 39.4 Selective One-Dimensional Growth of an Alkyl-Sugar Functionalized Ferrocene of Graphite — •Thiruvancheril Gopakumar, Prithwidip Saha, Khushboo Yadav, Shibin Chako, and Ramesh Ramapanicker
15:00 O 39.5 Growth and electronic structure of Tb disilicide nanowires on vicinal Si(111) surfaces — •Stephan Appelfeller, Martin Franz, Christian Hassenstein, Lars Freter, Hans-Ferdinand Jirschik, and Mario Dähne
15:15 O 39.6 Strain induced quasi one-dimensional rare earth silicides structures on Si(111) — •Frederic Timmer, Robert Oelke, Martin Franz, Stephan Appelfeller, Mario Dähne, and Joachim Wollschläger
15:30 O 39.7 Local transport measurements on terbium-silicide nanowires — •Frederik Edler, Ilio Miccoli, Herbert Pfnür, Stephan Appelfeller, Mario Dähne, Simone Sanna, Wolf G. Schmidt, and Christoph Tegenkamp
15:45 O 39.8 Capping of rare earth silicide nanowires on Si(001) — •Stephan Appelfeller, Martin Franz, Milan Kubicki, Paul Reiß, Tore Niermann, Markus Andreas Schubert, Michael Lehmann, and Mario Dähne
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