Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 39: 1D Metal Wires on Semiconductors II
O 39.5: Vortrag
Dienstag, 8. März 2016, 15:00–15:15, S052
Growth and electronic structure of Tb disilicide nanowires on vicinal Si(111) surfaces — •Stephan Appelfeller, Martin Franz, Christian Hassenstein, Lars Freter, Hans-Ferdinand Jirschik, and Mario Dähne — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin
One-dimensional metals may be useful for future applications, but they are especially interesting due to their unique physical phenomena, e.g. Luttinger liquid behavior or the Peierls transition. Vicinal substrates can enable the formation of such nanowires, when thin metallic films grow exclusively on well separated, narrow terraces. TbSi2 forms well ordered metallic monolayer films on planar Si(111) [1]. Here, the nanowire formation of TbSi2 on various vicinal Si(111) samples was investigated. Structural information, e.g. dimensions and edge characteristics, were obtained by scanning tunneling microscopy and confirm, together with the electronic properties obtained by core-level photoemission spectroscopy, the growth of TbSi2. Furthermore, the electronic dimensionality of the nanowires, which is illustrated by their Fermi surfaces, was determined using angle resolved photoemission spectroscopy.
This work was supported by the DFG (FOR1700, project E2). We kindly acknowledge the support of K. Horn and coworkers and of BESSY, where the photoemission experiments were carried out at the beamlines UE56/2 PGM-1 and PGM-2.
[1] M. Franz, J. Große, R. Kohlhaas, and M. Dähne, Surface Science 637, 149 (2015).