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Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 79: Graphene III: Electronic Properties

Donnerstag, 10. März 2016, 10:30–13:00, S053

10:30 O 79.1 PEEM of epitaxial graphene on silicon carbide — •Richard Hönig, Christoph Keutner, Cornelis Hilscher, Ulf Berges, and Carsten Westphal
10:45 O 79.2 Graphene growth on structured SiC — •Alexander Stöhr, Jens Baringhaus, Aleixei Zakharov, Christoph Tegenkamp, and Ulrich Starke
11:00 O 79.3 A new candidate for silicon carbide (3x3) surface reconstruction — •Jan Kloppenburg, Lydia Nemec, Björn Lange, Matthias Scheffler, and Volker Blum
11:15 O 79.4 Characterisation of Graphene Electrodes — •Markus Manz, Martin Lottner, Martin Stutzmann, and Jose Garrido
11:30 O 79.5 Ultraclean Freestanding Graphene by Pt-metal catalysis — •Jean-Nicolas Longchamp, Conrad Escher, and Hans-Werner Fink
11:45 O 79.6 Nano-scaled graphene solution-gated field-effect transistors — •Peter Knecht, Benno Martin Blaschke, Karolina Stoiber, Martin Letter, Simon Drieschner, and Jose Antonio Garrido
12:00 O 79.7 Graphene wrinkles: their conductivity, crystallinity, and reactivity — •Raul D. Rodriguez, Tao Zhang, Jana Kalbacova, Devang Parmar, Akhil Nair, Zoheb Khan, Mahfujur Rahaman, Ihsan Amin, Jacek Gasiorowski, Evgeniya Sheremet, Rainer Jordan, Michael Hietschold, and Dietrich R.T. Zahn
12:15 O 79.8 Conversion of pyrrolyl-thiophenol self-assembled monolayers (SAMs) into carbon nanomembranes (CNMs) and graphene — •Christof Neumann, Matthias Füser, Michael Mohn, Ute Kaiser, Andreas Terfort, and Andrey Turchanin
12:30 O 79.9 Extracellular stimulation of electrogenic cells using graphene devices — •Karolina Stoiber, Martin Lottner, Markus Manz, Simon Drieschner, Benno Blaschke, Martin Stutzmann, and José A. Garrido
12:45 O 79.10 High Q-factor in WSe2 Nano-electromechanical resonator — •Antoine Reserbat-Plantey, Nicolas Morell, Ioannis Tsioutsios, Kevin Schädler, François Dubin, Frank Koppens, and Adrian Bachtold
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