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TT: Fachverband Tiefe Temperaturen

TT 84: Topological Insulators II
(Joint session of DS, HL, MA, O and TT organized by O)

TT 84.7: Vortrag

Freitag, 11. März 2016, 11:30–11:45, H15

Bi2Se3-based heterostructures including magnetic layers: the case of n-QLs Bi2Se3 ontop of Mn-doped Bi2Se3 — •J. Honolka¹, M. Valiska², J. Warmuth³, M. Michiardi⁴, M. Vondracek¹, A. S. Ngankeu⁴, V. Holy², M. Bianchi⁴, G. Springholz⁵, V. Sechovsky², P. Hofmann⁴, and J. Wiebe³ — ¹Institute of Physics, ASCR, Prague, CZ — ²Department of Condensed Matter, Charles University, Prague, CZ — ³INF, University of Hamburg, Hamburg, DE — ⁴Department of Physics and Astronomy, iNANO, University of Aarhus, Aarhus, DK — ⁵Institute of Semiconductor Physics and Solid Solid State Physics, Johannes-Kepler University, Linz, AT

Interfaces between ferromagnetic and non-magnetic Bi2Se3 phases are studied as a material platform to investigate the influence of spin degrees of freedom on 3D topological insulator (TI) properties.

An inverted geometry of n quintuple layers (QLs) Bi2Se3 ontop of Mn-doped Bi2Se3 is achieved by molecular beam epitaxy for n=0 to n=24 QLs and allows to unhamperedly monitor the development of electronic and topological properties by surface sensitive key techniques like angular resolved photoemission spectroscopy. A gap at the Dirac point is observed at small n, which is gradually filled with increasing n. The Dirac point is fully reestablished at about n = 9 QLs. Band bending effects due to the proximity of the interface with the ferromagnetic layers are discussed.