Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II
DS 32.3: Topical Talk
Mittwoch, 22. März 2017, 15:30–16:00, CHE 89
Vacancy defects and electrical compensation in gallium oxide — •Filip Tuomisto — Aalto University, Espoo, Finland
Ga2O3 has recently generated significant interest and high quality growth (both thin-film and bulk) has been achieved with several techniques. Its distinctive feature compared to other transparent semiconducting oxides is the high transparency all the way to UV thanks to a wide 4.9 eV band gap. Hence this material has potential applications in future UV devices and high power electronics. n-type doping is achieved with Sn and Si, and highly resistive material can be produced by doping with Fe and Mg. p-type doping is yet to be achieved. Ga vacancies have been shown to act as efficient compensating centers in n-type material. In order use Ga2O3 as a semiconductor in electronics, detailed understanding and control of defects and doping are required. In this work, we analyze the formation mechanisms of Ga vacancies with positron annihilation spectroscopy in Ga2O3 thin films. We show that the choice of substrate, growth conditions and n-type dopant all have a dramatic effect on the efficiency of Ga vacancy formation and hence on the electrical properties of thin-film Ga2O3.