Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II

Mittwoch, 22. März 2017, 14:45–17:45, CHE 89

14:45 DS 32.1 Topical Talk: Defect induced magnetic or optical properties in gallium-based oxides — •Laurent Binet and Didier Gourier
15:15 DS 32.2 Photo- and electroluminescence of chromium doped β-Ga2O3 — •Andreas Fiedler, Zbigniew Galazka, and Klaus Irmscher
15:30 DS 32.3 Topical Talk: Vacancy defects and electrical compensation in gallium oxide — •Filip Tuomisto
16:00 DS 32.4 Localized defect states and charge trapping in Al2O3 films prepared by atomic layer deposition — •Karsten Henkel, Malgorzata Kot, and Dieter Schmeißer
  16:15 15 min. break.
16:30 DS 32.5 Topical Talk: Integration of Oxide Semiconductors with Traditional Semiconductors - A New Twist — •Scott Chambers
17:00 DS 32.6 Growth-control of the ordered double-perovskite stucture in (Pr0.5Ba0.5)CoO3−δ thin films — •Felix Gunkel, Clemens Hausner, David N. Müller, Lei Jin, Chunlin Jia, Daniel Bick, Theo Schneller, Ilia Valov, and Regina Dittmann
17:15 DS 32.7 Influence of annealing on the conductivity and transparency of niobium doped titanium dioxide electrodes prepared by sol-gel and their function in organic solar cells — •Peter Fischer, Roland Rösch, Shahidul Alam, Ulrich Schubert, Harald Hoppe, and Edda Rädlein
17:30 DS 32.8 Characterization of Unipolar Zinc-Tin-Oxide Devices — •Sofie Bitter, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann
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DPG-Physik > DPG-Verhandlungen > 2017 > Dresden