Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II

DS 32.8: Vortrag

Mittwoch, 22. März 2017, 17:30–17:45, CHE 89

Characterization of Unipolar Zinc-Tin-Oxide Devices — •Sofie Bitter, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Exp. Physik II, Germany

Amorphous zinc-tin-oxide (ZTO) consists of naturally abundant, non-toxic elements only and can be deposited at room temperature with a tunable electron density between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³ and a mobility as high as 10 cm²/Vs [1,2]. Therefore, ZTO is a suitable material for low-cost, flexible, transparent transistors and thus low-cost and bendable electronic applications.

We present metal semiconductor field effect transistors (MESFETs) using amorphous ZTO as n-type channel. Room temperature long throw magnetron sputtering from a target with a composition of 67% SnO₂ and 33% ZnO was used to deposit the ZTO channel [3]. On/Off ratios of 10⁵ are achieved for reactive sputtered Pt gate contacts. The stability of the MESFETs under positive and negative bias stress is investigated. Further, an aging of unipolar devices based on ZTO is reported, which increases the on/off ratio of the devices.

[1] Bitter et al., ACS Comb. Sci., 18, 4, 2015.

[2] Jayaraj et al., J. Vac. Sci. & Technol. B, 26, 2, 2008.

[3] Frenzel et al., Physica Status Solidi (a), 212, 7, 2015.