DS 7: Atomic Layer Deposition
Monday, March 20, 2017, 12:30–13:15, CHE 89
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12:30 |
DS 7.1 |
Atomic layer deposition (ALD) for the fabrication of HfO2- and TiO2- based resistive switching memories — •Alexander Hardtdegen, Hehe Zhang, and Susanne Hoffmann-Eifert
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12:45 |
DS 7.2 |
Al2O3 ALD on pristine graphene — •Marcel Junige, Julia Kitzmann, Marion Geidel, Grzegorz Lupina, Matthias Albert, Christian Wenger, and Johann W. Bartha
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13:00 |
DS 7.3 |
A hybrid molecular beam epitaxy based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures — •Siamak Nakhaie, Joseph M. Wofford, Thilo Krause, Xianjie Liu, Manfred Ramsteiner, Michael Hanke, Henning Riechert, and J. Marcelo J. Lopes
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