Dresden 2017 – wissenschaftliches Programm
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MI: Fachverband Mikrosonden
MI 5: Session on Nanostructuring Beyond Conventional Lithography
MI 5.5: Vortrag
Mittwoch, 22. März 2017, 12:45–13:00, MER 02
Site-controlled formation of Si nanodots in a buried SiO2 layer via ion-beam implantation and phase separation — •Xiaomo Xu1, Daniel Wolf1, Gregor Hlawacek1, René Hübner1, Ahmed Gharbi2, Thomas Prüfer1, Lothar Bischof1, Karl-Heinz Heinig1, Stefan Facsko1, and Johannes von Borany1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2CEA-LETI, Grenoble, France
The single electron transistor (SET) is a promising candidate for low energy-dissipation computing units. However, so far its success is hindered by low-temperature requirements and the lack of CMOS-compatible fabrication route. By combining standard top-down lithography with bottom-up self-assembly of Si nanodots we will overcome this barrier.
In this work, Si nanodots, sufficiently small for RT operation of SETs, are formed in a CMOS-compatible way inside a buried SiO2 layer. This is achieved via ion beam mixing in a geometrical restricted volume and subsequent thermally activated phase separation via RTA. Guided by 3DkMC and TRI3DYN simulations, we perform focused Ne+ beam irradiation with Helium Ion Microscopy (HIM) on planar layers, and Si+ broad-beam irradiation of nano-pillars with embedded SiO2. Both approaches lead to a constrained size of the collision cascade and hence the mixed volume. The as-formed Si nanodots are studied with TEM, SIMS and electrical characterization techniques.
This work has been funded by the European Union Horizon 2020 Research and Innovation Program under grant agreement No. 688072.