Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.18: Poster
Dienstag, 13. März 2018, 18:15–20:15, Poster B
A pulsed laser deposition technique to control the composition of ternary thin films in growth direction demonstrated on the (Alx,Ga1−x)2O3 alloy — •Max Kneisz, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
In conventional pulsed laser deposition (PLD) a continuous variation of the composition of ternary thin films in growth direction is not possible since the number of discrete alloy combinations is limited by the amount of targets which can be mounted in the setup.
We therefore propose a technique using only a single elliptically-segmented target with two regions of different composition.
We control the Al/Ga ratio of the thin films by varying the radial position of the PLD laser spot on the target and thereby changing the ratio of the path lengths of the laser spot in the different regions. In analogy to our approach for lateral continuous composition spreads [1] (lateral CCS), we call this method vertical CCS. We will show that we are able to control the composition of (Alx,Ga1−x)2O3 thin films in growth direction quasi continuously or stepwise. Therefore films with varying single Al-contents are grown using the new technique on c-sapphire substrates. The Al-content in the films is determined by transmission spectroscopy. The structural and optical quality is similar to films grown via conventional PLD.
H. von Wenckstern et al., CrystEngComm 15, 10020 (2013)