Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.59: Poster
Dienstag, 13. März 2018, 18:15–20:15, Poster B
Resistive Switching Behavior of Polycrystalline PCMO Thin Films with AlOx Tunnel Oxide — •Alexander Gutsche1, Christoph Bäumer1, Rainer Waser1,2, and Regina Dittmann1 — 1Peter Gruenberg Institut, Forschungszentrum Juelich GmbH, Germany — 2Institut fuer Werkstoffe der Elektrotechnik (IWE-2), RWTH Aachen, Germany
Redox based memory is a promising candidate for nonvolatile memory to replace flash memory and can be used as basis for novel neuromorphic circuits. Most of the employed systems show filamentary switching, which causes a high variability in resistivity induced by the stochastic filament formation process. Another type of resistive switching is interface type switching, which occurs for example in hetero structures consisting out of a tunnel barrier (AlOx) and a mixed-valence manganite (PCMO). Interface type switching suffers less from resistivity variability, because of the area scaling, i.e., the resistance value is inversely proportional to the surface area. In addition it is possible to adapt the memory device current to a given circuit requirement. Here we will present the switching characteristics of polycrystalline PCMO thin films grown on Pt substrates with an Al tunnel barrier, taking into account the influence of the growth temperature on the pulsed laser deposited PCMO film. The investigation of the formation step of the AlOx tunnel barrier shows a strong dependence of the initial state of the memory device, what can also be seen in the formation voltage, which is influenced by the initial state. Also we will present measurements of the area scalability of the memory cell.