Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 5: Layer Deposition (ALD, MBE, Sputtering, ...)
DS 5.3: Vortrag
Montag, 12. März 2018, 12:15–12:30, H 0111
Energy and mass selective ion beam assisted epitaxy for deposition of thin nitride films — •Philipp Schumacher1, Michael Mensing1, Jürgen W. Gerlach1, Stephan Rauschenbach2,3, and Bernd Rauschenbach1 — 1Leibniz-Institut für Oberflächenmodifizierung (IOM), Leipzig — 2University of Oxford, UK — 3Max-Planck-Institut für Festkörperforschung, Stuttgart
Ion-beam assisted deposition (IBAD) represents a frequently applied concept in thin film growth. For hyperthermal kinetic energies (few 1 eV-few 100 eV), the impinging ions provide energy for enhancing the mobility of adatoms, ideally only on the surface. Thus, ion irradiation induced creation of point defects below the surface is minimized. Therefore, IBAD using hyperthermal ions can be applied for growing thin films, for which a high crystalline quality is required. In general, the versatility of IBAD is limited depending on the type of ion source applied. Typical ion sources generate ion beams which contain a multitude of different ion species, each possessing certain kinetic energies, which are possibly different from one another. In order to define the deposition conditions more precisely, a setup for energy and mass selective ion beam assisted deposition (EMS-IBAD) was created, to be used for the deposition of nitride thin films. The feasibility of EMS-IBAD by applying this setup has exemplarily been shown for the growth of non-polar GaN thin films on Al2O3(1102). In this contribution, the EMS-IBAD setup is presented, subsequently a brief characterization of such thin films by x-ray diffraction and reflection high-energy electron diffraction is added.