Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 5: Layer Deposition (ALD, MBE, Sputtering, ...)

DS 5.4: Vortrag

Montag, 12. März 2018, 12:30–12:45, H 0111

Modifying the texture of epitaxially grown chalcogenide thin films — •Marc Pohlmann, Marvin Kaminski, and Matthias Wuttig — I. Institute of Physics, Physics of New Materials, RWTH Aachen University, 52056 Aachen, Germany

A significant number of chalcogenides offers a unique portfolio property. They can be rapidly switched between the amorphous and crystalline state. This transition is accompanied by large changes in optical and electrical properties, which creates significant application opportunities. Hence, these materials are employed for rewriteable optical data storage and have also recently been introduced as electronic phase change memory devices, trying to close the gap between non-volatile but slow devices (such as Flash memories) and volatile but extremely fast devices, like DRAMs. To improve the application range of these materials, it is mandatory to further improve phase change devices. A promising route to do so is via material optimization. This approach requires an understanding of the material properties on a very fundamental level. Therefore, in the frame of this work, we want to investigate the texture formation of different chalcogenides via RHEED and XRD to obtain MBE-grown thin films of high crystal quality. We employ heterostructures of GeTe, SnTe and Sb₂Te₃ to demonstrate how different textures and surfaces can be achieved on the same substrate.