Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Quantum dots and wires: Transport properties
HL 19.11: Vortrag
Dienstag, 13. März 2018, 12:15–12:30, A 151
High-speed error counting in silicon quantum dot charge pumps — •Máté Jenei1, Ruichen Zhao2, Alessandro Rossi3, Kaun Yen Tan1, Yuxin Sun2, Andrew Dzurak2, and Mikko Möttönen1 — 1QCD Labs, Department of Applied Physics, Aalto University, Espoo, Finland — 2School of Electrical Engineering and Telecommunications, University of New South Wales, Sidney, Australia — 3Cavendish Laboratory, University of Cambridge, Cambridge, United Kingdom
Single-charge pumps have demonstrated to produce a highly accurate quantized current of 160 pA with a relative uncertainty below 0.27 ppm, specifically for applications in quantum metrology[1]. The reported uncertainty mostly dominated by the experimental apparatus, resulting inconveniently long averaging times. To overcome this and systematic errors, in-situ charge sensing is a promising solution. We present our most recent progress on a novel twin aluminium single-electron-transistor charge sensor capacitively coupled to a silicon quantum dot pump. The sensor constitutes an improvement in the detection sensitivity that was the limiting factor of our first generation of designs [2]. The new hybrid device potentially allows us to carry out error counting by combining bidirectional pumping and charge sensing.
[1] R. Zhao et al., Phys. Rev. Applied 8, 044021 (2017)
[2] T. Tanttu et al., New J. Phys 17, 10, 103030 (2015)