Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 27: Nitrides: Preparation and characterization II
HL 27.12: Vortrag
Mittwoch, 14. März 2018, 12:30–12:45, EW 203
Time-integrated and time-resolved luminescence studies of 3D InGaN/GaN microrod and fin heterostructures — Angelina Vogt1, Jana Hartmann1,2, Hao Zhou1,2, Felix Blumenröther1, Hergo-Heinrich Wehmann1,2, Andreas Waag1,2, and •Tobias Voss1 — 1Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology, TU Braunschweig, 38092 Braunschweig, Germany — 2Epitaxy Competence Center, ec2, 38092 Braunschweig, Germany
Three-dimensional (3D) GaN-based structures allow for the integration of InGaN quantum wells (QWs) on their non-polar sidewalls while keeping the material free of extended defects. Thus, they represent a promising approach for next generation LEDs. In order to optimize the internal quantum efficiency (IQE) of the 3D heterostructures, a detailed knowledge of the radiative and non-radiative recombination channels and their rates is required. We compare the spectrally and temporally resolved photoluminescence (PL) and cathodoluminescence (CL) of InGaN QWs of 3D microrod and fin (microwalls) heterostructures. Both were grown by continuous selective area MOVPE. We analyse the homogeneity of the indium in the QWs along the height of the structures and the length of the fins with time-integrated PL and CL measurements. The dynamics are investigated by time-resolved PL measurements at different sample temperatures. The InGaN luminescence of the 3D structures show decay times in the order of 200 ps and just a weak influence of the quantum confined Stark effect due to the QW growth mainly on the non-polar sidewalls.