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Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: Nitrides: Preparation and characterization II

Mittwoch, 14. März 2018, 09:30–13:00, EW 203

09:30 HL 27.1 Structural and optical characterisation of germanium doped cubic AlxGa1-xN grown by molecular beam epitaxy — •Michael Deppe, Fabian Tacken, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As
09:45 HL 27.2 Photoelectrochemical response of GaN, InGaN and GaNP nanowire ensembles — •Jan M. Philipps, Rene Couturier, Sara Hölzel, Pascal Hille, Jörg Schörmann, Irina A. Buyanova, Sangam Chatterjee, Martin Eickhoff, and Detlev M. Hofmann
10:00 HL 27.3 Impact of Growth Interruption on the Structure and Luminescence of two- and zero-dimensional GaN/AlN Heterostructures — •Hannes Schürmann, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Christoph Berger, Jürgen Bläsing, Armin Dadgar, André Strittmatter, and Jürgen Christen
10:15 HL 27.4 Charging of self-assembled GaN quantum dot ensembles by Capacitance-Voltage spectroscopy at room temperature — •Carlo A. Sgroi, Julien Brault, Jean Y. Duboz, Arne Ludwig, and Andreas D. Wieck
10:30 HL 27.5 Pulsed reactive magnetron sputter deposition of AlN and GaN — •Florian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
10:45 HL 27.6 Direct comparison of structural and optical properties of GaN fin LED microstructure with nonpolar sidewalls — •G. Schmidt, P. Veit, S. Petzold, A. Dempewolf, T. Hempel, F. Bertram, J. Hartmann, H. Zhou, F. Steib, J. Ledig, S. Fündling, H.-H. Wehmann, A. Waag, and J. Christen
  11:00 15 min. break.
11:15 HL 27.7 MOVPE growth of large area InGaN LEDs with GaN-based tunnel junctions — •Silvio Neugebauer, Christoph Berger, Florian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
11:30 HL 27.8 X-ray diffraction studies of zincblende GaN — •Martin Frentrup, Lok Yi Lee, Suman-Lata Sahonta, Menno J. Kappers, Rachel A. Oliver, Colin J. Humphreys, and David J. Wallis
11:45 HL 27.9 Selective area growth of GaN-ZnO core-shell nanowires for photocatalytic CO2 reduction — •Florian Pantle, Max Kraut, Julia Winnerl, Marvin Koch, and Martin Stutzmann
12:00 HL 27.10 Parametric model for the anisotropic dielectric function of m-plane AlGaN up to 20eV — •Michael Winkler, Martin Feneberg, Shigefusa F. Chichibu, Ramón Collazo, Zlatko Sitar, Maciej D. Neumann, Norbert Esser, and Rüdiger Goldhahn
12:15 HL 27.11 Effects of well width on the recombination dynamics in m-plane GaInN/GaN quantum wells — •Philipp Henning, Fedor Alexej Ketzer, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
12:30 HL 27.12 Time-integrated and time-resolved luminescence studies of 3D InGaN/GaN microrod and fin heterostructuresAngelina Vogt, Jana Hartmann, Hao Zhou, Felix Blumenröther, Hergo-Heinrich Wehmann, Andreas Waag, and •Tobias Voss
12:45 HL 27.13 Fe-doped GaN a suitable material for antiferromagnetic spintronics? — •Andrea Navarro-Quezada, Thibaut Devillers, Tian Li, Andreas Grois, Maciej Sawicki, Tomasz Dietl, and Alberta Bonanni
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DPG-Physik > DPG-Verhandlungen > 2018 > Berlin