Berlin 2018 – wissenschaftliches Programm
HL 27.13: Vortrag
Mittwoch, 14. März 2018, 12:45–13:00, EW 203
Fe-doped GaN a suitable material for antiferromagnetic spintronics? — •Andrea Navarro-Quezada1,2, Thibaut Devillers1, Tian Li3, Andreas Grois1, Maciej Sawicki3, Tomasz Dietl3, and Alberta Bonanni1 — 1Semiconductor and Solid State Physics, Johannes Kepler Universität, Linz, Austria — 2Institute of Experimentalphysics, Johannes Kepler Universität, — 3Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
The control over the aggregation of magnetic ions in a non-magnetic semiconductor matrix constitutes a new way to realize semiconductor/ferromagnetic nanocomposites with yet unexplored but striking functionalities. In this work we show that it is possible to obtain a controlled and well-defined arrangement of single-phase magnetic GaxFe4-xN nanocrystals (NCs) embedded in a GaN matrix . Depending on the fabrication conditions, a modification of the lattice parameter of the NCs is observed, pointing to the incorporation of Ga into the Fe4N structure and therefore, to the formation of GaFe3N. While Fe4N is a strong FM semi-metal with minority spin-polarization, GaFe3N is a weak AFM material. Our results open the perspectives of this magnetic semiconductor for the demonstration of interesting effects such as spin-pumping for spin current injectors/detectors, anisotropic magnetoresistance and the manipulation of the NCs magnetic moment via an electric field .
 A. Navarro-Quezada et al., Appl. Phys. Lett. 101, 081912 (2012)
 D. Sztenkiel et al., Nature Communications 7, 015034 (2017)