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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.4: Poster
Mittwoch, 14. März 2018, 17:30–19:30, Poster F
Raman spectrosopic characterization of GaN grown by high-temperature vapor phase epitaxy — •Christian Röder1, Mykhailo Barchuk2, Tom Schneider3, Gleb Lukin3, Friederike Zimmermann4, and Jens Kortus1 — 1TU Bergakademie Freiberg, Institute of Theoretical Physics, D-09599 Freiberg, Germany — 2TU Bergakademie Freiberg, Institute of Materials Science, D-09599 Freiberg, Germany — 3TU Bergakademie Freiberg, Institute of Nonferrous Metallurgy and Purest Materials, D-09599 Freiberg, Germany — 4TU Bergakademie Freiberg, Institute of Applied Physics, D-09599 Freiberg, Germany
High-temperature vapor phase epitaxy (HTVPE) [1] is considered as a cost-efficient technology for fabrication of GaN templates.
In this work, recent results on structural and optical characterization of GaN layers grown by HTVPE at various growth conditions will be presented.
Analysing reciprocal space maps recorded by HRXRD, the threading dislocation density of the investigated samples was assessed.
In order to monitor residual stress within the GaN layers confocal Raman spectroscopic measurements at room temperature with high lateral and spatial resolution were performed.
The spectral position of the non-polar E2(high) Raman mode indicates compressive in-plane strain, which is reduced with increasing GaN layer thickness.
This work is financially supported by the European Union (European Social Fund) and by the Saxonian Government (grant no. 100231954).
[1] G. Lukin et al. Phys. Stat. Solidi A 65 (2017) 1600753