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HL: Fachverband Halbleiterphysik

HL 37: Oxide Semiconductors

HL 37.12: Talk

Thursday, March 15, 2018, 12:30–12:45, EW 203

Identification of switching modes in Y₂O₃ transition metal oxide RRAM devices — •Eszter Piros¹, Stefan Petzold¹, Benjamin Krah¹, Sharath Sankaramangalam Ulhas¹, Tom Blomberg², Marko Tuominen², Hessel Sprey³, Christian Wenger⁵, Eric Jalaguier⁴, Sophie Bernasconi⁴, Etienne Nowak⁴, Erwin Hildebrandt¹, and Lambert Alff¹ — ¹Institute for Materials Science, Advanced Thin Film Technology, Technische Universität Darmstadt, Alarich-Weiss-Str. 2 D-64287 Darmstadt, Germany — ²ASM Microchemistry Ltd. Väinö Auerin katu 12 A, 00560 Helsinki, Finland — ³ASM Belgium NV Kapeldreef 7, 3001 Leuven, Belgium — ⁴CEA Leti 17 avenue des Martyrs, 38054 Grenoble, France — ⁵IHP Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Resistive random access memory (RRAM) devices offer a new solution to the current problems of scalable non-volatile data storage. Here we report the stabilized resistive switching modes [1] in yttrium oxide-based RRAM devices. In the bipolar device, stable intermediate resistance states are achieved by varying either the voltage sweep values during reset or by varying the compliance current in the set process. This opens up the possibility of multibit programming and neuromorphic applications. The conduction mechanism of bipolar and unipolar devices was also investigated. The high endurance that exceeds several hundred DC switching cycles and very good data retention (extrapolated to 10 years at 85^∘C) make both bi- and unipolar devices suitable candidates for next generation non-volatile memory devices. [1] S. U. Sharath, Adv. Funct. Mater. 27, 1700432 (2017)