Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 37: Oxide Semiconductors

Donnerstag, 15. März 2018, 09:30–13:00, EW 203

09:30 HL 37.1 Polaronic entropy stabilizes mixed-valence compound K4O6Patrick Merz, Claudia Felser, Martin Jansen, •Christoph Freysoldt, and Jörg Neugebauer
09:45 HL 37.2 Controlling and Analyzing the Conductivity of TiO2 Nanorod Arrays — •Carola Ebenhoch, Julian Kalb, Elise Sirotti, Domenik Vögel, and Lukas Schmidt-Mende
10:00 HL 37.3 Spray Coating of Transparent Oxide Semiconductors - β-Ga2O3, In2O3-Ga2O3-ZnO, and ZnO Thin Films — •Constance Schmidt, Axel Fechner, and Dietrich R.T. Zahn
10:15 HL 37.4 Excitonic absorption and optical properties of ZnO films — •Stefan Zollner, Nuwanjula Samarasingha, Zachary Yoder, Dipayan Pal, Aakash Mathur, Ajaib Singh, Rinki Singh, and Sudeshna Chattopadhyay
10:30 HL 37.5 Tunable intersubband transitions in ZnO/ZnMgO multiple quantum wells in the mid infrared spectral range — •Laura Orphal, Sascha Kalusniak, Oliver Benson, and Sergey Sadofev
10:45 HL 37.6 Towards high-performance printed in-plane and vertical MOSFETs — •Felix Neuper, Robert Kruk, Horst Hahn, and Ben Breitung
  11:00 15 min. break.
11:15 HL 37.7 Influence of parameters on the properties of pulsed radiofrequency magnetron sputtered Ga2O3 — •Philipp Schurig, Fabian Michel, Martin Becker, Angelika Polity, and Peter Klar
11:30 HL 37.8 Optical properties of amorphous Zn-Sn-Ti oxides: A combined molecular dynamics and density functional theory study — •Daniel Fritsch
11:45 HL 37.9 Interactions of Rydberg Excitons in Cu2O — •Felix Föst, Julian Heckötter, Rico Schwartz, Marc Aßmann, Dietmar Fröhlich, and Manfred Bayer
12:00 HL 37.10 A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides — •Christopher Linderälv, Anders Lindman, and Paul Erhart
12:15 HL 37.11 Defect induced magnetism and polaronic states in ZnOSanjeev K. Nayak, •Waheed A. Adeagbo, Martin Hoffmann, Matthias Geilhufe, Hichem Ben Hamed, Arthur Ernst, and Wolfram Hergert
12:30 HL 37.12 Identification of switching modes in Y2O3 transition metal oxide RRAM devices — •Eszter Piros, Stefan Petzold, Benjamin Krah, Sharath Sankaramangalam Ulhas, Tom Blomberg, Marko Tuominen, Hessel Sprey, Christian Wenger, Eric Jalaguier, Sophie Bernasconi, Etienne Nowak, Erwin Hildebrandt, and Lambert Alff
12:45 HL 37.13 Solution processed hybrid field effect transistors based on graphene electrodesSurya Abhishek Singaraju, •Tessy Theres Baby, Jasmin Aghassi-Hagmann, Horst Hahn, and Ben Breitung
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DPG-Physik > DPG-Verhandlungen > 2018 > Berlin