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HL: Fachverband Halbleiterphysik
HL 37: Oxide Semiconductors
HL 37.13: Talk
Thursday, March 15, 2018, 12:45–13:00, EW 203
Solution processed hybrid field effect transistors based on graphene electrodes — Surya Abhishek Singaraju1, •Tessy Theres Baby1, Jasmin Aghassi-Hagmann1,2, Horst Hahn1, and Ben Breitung1 — 1Institue of Nanotechnology, Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen 76344, Germany — 2Department of Electrical Engineering and Information Technology, Offenburg University of Applied Sciences, Offenburg 77652, Germany
In our work we target solution-processable, electrolyte-gated field-effect transistors (EGFETs) based on an In2O3 precursor channel material and graphene for the passive electrodes. The EGFETs were prepared on glass substrates by printing crystalline In2O3 as active material, graphene ink for passive structures and a composite solid polymer electrolyte (LiClO4/PC/PVA/DMSO) as gating compound. Good printing resolution could be achieved by ink-jet printing the In2O3 precursor and the electrolyte and by microplotting the graphene electrodes using an ultrasonic-controlled fluid dispensing microplotter. The chemical properties and the interaction of different transistor components was analyzed using methods like XPS and cyclic voltammetry. The interface between source/drain and the channel plays a major role in the device performance and was investigated regarding the electrical contact. We observed that the devices exhibited relatively high output current values for a fully printed transistor. Also, the on/off ratio from the transfer curve was measured to be in the range of 105-107.