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Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 39: Group IV (other than C): Si/Ge/SiC

Thursday, March 15, 2018, 11:00–13:00, EW 015

11:00 HL 39.1 investigation of 3C-SiC/SiO2 interfacial point defects from first principles calculations and electron paramagnetic resonance measurements — •Taufik Adi Nugraha, Martin Rohrmüller, Uwe Gerstmann, Siegmund Greulich-Weber, Jean-Louis Cantin, Jurgen von Bardeleben, Wolfgang Gero Schmidt, and Stefan Wippermann
11:15 HL 39.2 Towards room-temperature extended infrared Si-based photoresponse: A case study of Te-hyperdoped Si — •Mao Wang, Yonder Berencén, Slawomir Prucnal, Eric García-Hemme, René Hübner, Ye Yuan, Chi Xu, Lars Rebohle, Roman Böttger, René Heller, Harald Schneider, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou
11:30 HL 39.3 Crystal phase effects in group IV nanowire polytypes and their homojunctions — •Michele Amato
11:45 HL 39.4 Shell-Thickness Controlled Semiconductor-Metal Transition in Si-SiC Core-Shell Nanowires — •Michele Amato
12:00 HL 39.5 Sub-Bandgap Photoluminescence Study on Implantation-Induced Color Centers in 4H-SiC — •Maximilian Rühl, Christian Ott, Michael Krieger, and Heiko B. Weber
12:15 HL 39.6 electronic and optical properties of hexagonal germanium: influence of echange and correlation — •valerio armuzza, jürgen furthmüller, claudia rödl, friedhelm bechstedt, and silvana botti
12:30 HL 39.7 Phase separation in metastable Ge1−xSnx epilayers induced by free running Sn precipitates — •Heiko Groiss, Martin Glaser, Magdalena Schatzl, Moritz Brehm, Dagmar Gerthsen, and Friedrich Schäffler
12:45 HL 39.8 High-resolution patterning of germanium for nanoelectronics applicationsAnushka S. Gangnaik, Muhammad Bilal Khan, Shima J. Ghamsari, Lars Rebohle, Artur Erbe, Justin D. Holmes, and •Yordan M. Georgiev
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