Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 46: Quantum dots and wires: Optical properties III
HL 46.3: Vortrag
Donnerstag, 15. März 2018, 15:30–15:45, A 151
Exciton dynamics in InAs(Sb)/GaAs submonolayer stacks — •Bastian Herzog1, Fuad Alhussein1, Benjamin Lingnau2, Mirco Kolarczik1, Sophia Helmrich1, David Quandt3, Udo Pohl3, André Strittmatter4, Olaf Brox5, Markus Weyers5, Ulrike Woggon1, Kathy Lüdge2, and Nina Owschimikow1 — 1Institut für Optik und atomare Physik, Technische Universität Berlin — 2Institut für theoretische Physik, Technische Universität Berlin — 3Institut für Festkörperphysik, Technische Universität Berlin — 4Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg — 5Ferdinand Braun Institut, Leibniz Institut für Höchstfrequenztechnik Berlin
The deposition of InAs as a submonolayer (SML) superlattice into a GaAs matrix creates an electronic potential landscape with hetero-dimensionally confined charge carriers. While holes are fully trapped inside the In-rich agglomerations, electrons are freely moving within an effective two-dimensional reservoir leading to ultrafast carrier relaxation time scales and a strong coupling of occupation and absorption dynamics. The emission lines of these structures are relatively narrow. Via the doping of antimony (Sb) atoms into these In-agglomerations the emission linewidth is strongly enhanced. In photoluminescence experiments, we show that while the recombination dynamics in the Sb-doped SML stacks is altogether slowed down compared to undoped SMLs, general SML-specific features like lateral mobility of carriers and large amplitude-phase coupling are maintained.