Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: 2D Materials: Session III (joint session DS/CPP/HL)

HL 51.9: Vortrag

Freitag, 16. März 2018, 12:00–12:15, H 2032

Pulsed Laser Deposition of Monolayer WSe2 — •Avaise Mohammed1, Hiroyuki Nakamura1, Peter Wochner1, Shyjumon Ibrahimkutty1, Armin Schulz1, Kathrin Müller1, Krystian Nowakowski2, Keita Matsuda3, Johannes Geurs1, Yijin Zhang1, Mona Stadler4, Kenji Watanabe5, Takashi Taniguchi5, Benjamin Stuhlhofer1, Georg Cristiani1, Gennady Logvenov1, Michael Jetter4, Peter Michler4, Jurgen Smet1, Ulrich Starke1, and Hidenori Takagi1,61MPI-FKF — 2University of Twente — 3Nagoya University — 4IHFG, University of Stuttgart — 5NIMS — 6IFMQ, University of Stuttgart

Ultrathin WSe2 films were deposited using a custom built hybrid-Pulsed Laser Deposition (PLD) system on different substrates. Raman spectroscopy and atomic force microscopy were used to identify the monolayer (ML) WSe2. Synchrotron based grazing incidence X-ray diffraction revealed WSe2 films to have a compressive strain on Al2O3 r-cut substrates. Angle resolved photoelectron spectroscopy confirmed the valance band structure of ML WSe2 on epitaxial graphene with a clear spin splitting of 480 meV. Photoluminescence signal was identified from ML WSe2 deposited on hexagonal BN. The results give evidence for PLD to be an excellent approach for the growth of monolayer transition metal chalcogenides.

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